Numerical solution of Poisson's equation in two-dimensions (2D) for linearly-graded pn junction of silicon

Authors

  • Ali Darkwi
  • Fathi Elfituri

DOI:

https://doi.org/10.37376/ljst.v13i1.2180

Keywords:

Charge density, impurity, depletion layer, finite difference method

Abstract

In this paper, the numerical solution of Poisson's equation in two-dimension (2D) of p-n junction of silicon has been carried out using Neumann and Dirichlet boundary conditions. Assumption of linearly grading impurities doping has been used for analysis of charge density. The calculation has been done for different dopant concentration rates of impurities. The aim of this calculation is to find out the profile of the potential and electric field within depletion layer.

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Author Biographies

Ali Darkwi

Department of Physics, Faculty of Science, University of Benghazi

Fathi Elfituri

Department of Physics, Faculty of Science, University of Benghazi

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Published

2022-09-18

How to Cite

Darkwi, A., & Elfituri , F. (2022). Numerical solution of Poisson’s equation in two-dimensions (2D) for linearly-graded pn junction of silicon. Libyan Journal of Science &Amp;Technology, 13(1). https://doi.org/10.37376/ljst.v13i1.2180

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Section

Articles