Influence of annealing on Si-Ge thin films with high concentration of tellurium and zinc

Abstract

The elements are distinguished via the basis of energy band gap. Two configurations Si₁₀Ge₁₀Te₈₀ and Si₁₀Ge₁₀Zn₈₀ multilayers were annealed under vacuum at eutectic temperature of 400 °C to form alloys between the deposited layers.  The two samples were studied at different temperatures to improve the physical properties of the thin films. Kinetics of the two configurations Si₁₀Ge₁₀Te₈₀ and Si₁₀Ge₁₀Zn₈₀ were studied in the temperature range 308- 673 ^oK.  The results revealed that the crystallization of the thin film of multilayer for the samples increases with increasing the annealing temperature and increasing the zinc content. The influence of annealing on the structure and stability of the samples has been studied by X- ray diffraction.  The optical and electrical measurements were carried out after annealing. The electrical conductivity of the two samples was measured as a function of temperature and annealing time. It was found that the electrical conductivity for Si₁₀Ge₁₀Zn₈₀ increases, and the optical gap decrease due to the crystallization effects that occurs only in Ge matrix and with increasing zinc content at high concentration.